Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs)-Reference-Cited by-同舟云学术

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Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs)

Published:2018-03-26 Issue:2 Volume:17 Page:682-688
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Khadir A.,Sengouga N.,Kouzou A.,Abdelhafidi M. K.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s10825-018-1157-1/fulltext.html

Reference21 articles.

1. Chakraborty, P.S., Moen, K.A., Cressler, J.D.: An investigation on the optimization and scaling of complementary SiGe HBTs. IEEE Trans. Electron Devices 60, 34–41 (2013)

2. Zhao, E., Sutton, A.K., Haugerud, B.M., Cressler, J.D., Marshall, P.W., Reed, R.A., El-Kareh, B., Balster, S., Yasuda, H.: The effects of radiation on 1/f noise in complementary (npn + pnp) SiGe HBTs. IEEE Trans. Nucl. Sci. 51, 3243–3249 (2004)

3. Bellini, M., Jun, B., Sutton, A.K., Appaswamy, A.C., Cheng, P., Cressler, J.D., Marshall, P.W., Schrimpf, R.D., Fleetwood, D.M., El-Kareh, B., Balster, S., Steinmann, P., Yasuda, H.: The effects of proton and X-ray irradiation on the DC and AC performance of complementary (npn + pnp) SiGe HBTs on thick-film SOI. IEEE Trans. Nucl. Sci. 54, 2245–2250 (2007)

4. Chakraborty, P.S., Appaswamy, A.C., Saha, P.K., Jha, N.K., Cressler, J.D., Yasuda, H., Eklund, B., Wise, R.: Mixed-mode stress degradation mechanisms in pnp SiGe HBTs. IEEE International Reliability Physics Symposium (IRPS), pp. 83–88 (2009)

5. Zerounian, N., Aniel, F., Barbalat, B., Chevalier, P., Chantre, A.: 500 GHz cutoff frequency SiGe HBTs. Electron. Lett. 43, 774–775 (2007)

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