An efficient numerical approach to studying impact ionization in sub-micrometer devices-Reference-Cited by-同舟云学术

An efficient numerical approach to studying impact ionization in sub-micrometer devices

Published:2013-11-23 Issue:1 Volume:13 Page:329-337
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Chau Quan

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-013-0536-x.pdf

Reference34 articles.

1. Takeda, E., Yang, C., Hameda, A.: Hot-Carrier Effects in MOS Devices. Academic Press, New York (1995)

2. Slotboom, J., Streutker, G., Dort, M., Woerlee, P., Pruijmboom, A., Gravesteijn, D.: Non-local impact ionization in silicon devices. IEDM Technol. Dig., pp. 127–130 (1991)

3. Taniguchi, K., Yamaji, M., Sonoda, K., Kunikiyo, T., Hamaguchi, C.: Monte Carlo study of impact ionization phenomena in small geometry MOSFETs. IEDM Technol. Dig., pp. 355–358 (1994)

4. Chang, D., Fossum, J.: Simplified energy-balance model for pragmatic multi-dimensional device simulation. Solid-State Electron. 41, 1795–1802 (1997)

5. Hayat, M., Saleh, B., Teich, M.: Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes. IEEE Trans. Electron Devices 39, 546–552 (1992)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters;Devices and Methods of Measurements;2022-12-22

2. Comparison the electron momentum and energy relaxation process in wurtzite GaN, InN and AlN by Monte Carlo method;Solid State Communications;2019-02

3. Electron Momentum and Energy Relaxation Times in Wurtzite GaN, InN and AlN: A Monte Carlo Study;Journal of Electronic Materials;2017-11-30

4. Investigating and modeling impact ionization current in MOSFETs;Solid-State Electronics;2014-04

5. New Models for Impact Ionization in Submicrometer Devices;IEEE Transactions on Electron Devices;2014-04