Analysis of rapid thermal annealings of boron and arsenic in polysilicon emitter structures-Reference-Cited by-同舟云学术

Analysis of rapid thermal annealings of boron and arsenic in polysilicon emitter structures

Published:1993-01 Issue:1 Volume:22 Page:135-141
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Gontrand C.,Merabet A.,Krieger-Kaddour S.,Dubois C.,Vallard J. P.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02665736.pdf

Reference16 articles.

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3. G. Giroult, A. Nouailhat and M. Gauneau,J. Appl. Phys. 67, 515 (1990).

4. H.-J. Kim and C.V. Thompson,Polysilicon Films and Interfaces, eds. C.Y. Wong, C.V. Thompson and K.N. Tu (Pittsburgh, PA: Materials Research Society, 1988), p. 143.

5. L.R. Zheng, L.S. Hung and J.W. Mayer,Polysilicon Films and Interfaces, eds. C.Y. Wong, C.V. Thompson, and K.N. Tu (Pittsburgh, PA: Materials Research Society, 1988), p. 135.

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