Diffusion and segregation of arsenic and boron in polysilicon/silicon systems during rapid thermal annealing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference21 articles.
1. Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors
2. An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high‐resolution electron microscopy observations
3. Study of a WSi2/polycrystalline silicon/monocrystalline silicon structure for a complementary metal‐oxide‐semiconductor for a compatible self‐aligned bipolar transistor emitter
4. Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometry
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3. Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films;Journal of Alloys and Compounds;2010-06
4. The effect of arsenic fluence on the boron diffusion in the polysilicon on monosilicon during rapid thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
5. Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations;Materials Science and Engineering: B;2005-12
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