Interfacial properties governing ohmic contacts between gold alloys and oriented gallium arsenide crystals-Reference-Cited by-同舟云学术

Interfacial properties governing ohmic contacts between gold alloys and oriented gallium arsenide crystals

Published:1975-11 Issue:11 Volume:10 Page:1929-1937
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Zee Leo Y.,Munir Z. A.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00754482.pdf

Reference19 articles.

1. F. A. Cunnell, J. T. Edmond andW. R. Harding,Sol. Stat. Electronics 1 (1960) 97.

2. D. K. Jadus, H. E. Reedy andD. L. Fencht,J. Electrochem. Soc. 114 (1967) 408.

3. A. P. Vyatkin, D. M. Ivleva, L. M. Krasil' Nikova, V. A. Presnov, B. A. Selivanov andM. P. Yakubenya,Sibirsk. Fiz Tekhn. Nauchn. Issled. Inst. pri Tomskorn Gos. Univ. (1964) 205.

4. V. A. Presnov, A. P. Vyatkin andM. P. Yakubenya,Poroshkovoi Met. Akad. Nauk. Ukr. S.S.R. (1963) 293.

5. J. S. Harris, Y. Nanichi, G. L. Pearson andG. F. Day,J. Appl. Phys. 40 (1969) 4575.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of size and density controlled GaAs/InxGa1−xAs/GaAs (x=0.10) nanowires on anodic alumina membrane-assisted etching of nanopatterned GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11

2. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors;Science and Technology of Advanced Materials;2002-01

3. Development of ohmic contact materials for GaAs integrated circuits;Materials Science Reports;1990-01

4. Wetting of InP by indium- and indium-tin melts;Crystal Research and Technology;1989-09

5. Au-GaAs(110) interface: Photoemission studies of the effects of temperature;Physical Review B;1986-11-15