Wetting of InP by indium- and indium-tin melts-Reference-Cited by-同舟云学术

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Wetting of InP by indium- and indium-tin melts

Published:1989-09 Issue:9 Volume:24 Page:887-891
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Mareck DC U.,Gottschalch V.,Butter E.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference16 articles.

1. Prevention of InP surface decomposition in liquid phase epitaxial growth

2. LPE growth effects of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.55P0.45 on structured InP substrates

3. Preservation of Indium Phosphide Substrates: The In‐Sn‐P Melt Revisited

4. The influence of substrate characteristics on the contact angles between liquid gallium and gallium arsenide crystals

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOVPE growth and real structure of vertical-aligned GaAs nanowires;Journal of Crystal Growth;2007-01

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