Domain matching epitaxy of α-Ga2O3 thin film on sapphire by pulsed laser deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
https://link.springer.com/content/pdf/10.1007/s40042-023-00766-1.pdf
Reference25 articles.
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3. K. Matsuzaki et al, Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3, Appl. Phys. Lett. 88, 092106 (2006). https://doi.org/10.1063/1.2179373
4. M. Higashiwaki et al., Gallium oxide (Ga2O3) metal–semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates, Appl. Phys. Lett. 100, 013504 (2012). https://doi.org/10.1063/1.3674287
5. Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors, Appl. Phys. Lett. 90, 031912 (2007). https://doi.org/10.1063/1.2432946
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