Structural characteristics and defect states of intrinsic GaN epi-layers in a high power device structure
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Published:2021-06-18
Issue:
Volume:
Page:
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ISSN:0374-4884
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Container-title:Journal of the Korean Physical Society
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language:en
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Short-container-title:J. Korean Phys. Soc.
Author:
Bong Chung-Jong, Ahn Chang Wan, Bae Sung-Bum, Kim Eun KyuORCID
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
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