Author:
Im Yeon Ho,Hahn Yoon-Bong
Publisher
Springer Science and Business Media LLC
Subject
General Chemical Engineering,General Chemistry
Reference16 articles.
1. Cho, B.-C., Im, Y. H. and Hahn, Y B., “Fast Dry Etching of Doped GaN Films in Cl2-Based Inductively Coupled High density Plasmas”,J. Kor. Phys. Soc.,37,23 (2000).
2. Givens, J., Lee, J., Cain, O., Marks, J., Keswick, P. and Cunningham, C., “,Selective Dry Etching in a High Density Plasma for 0.5 Μm Complementary Metal-Oxide-Semiconductor Technology”,J. Vac. Sci. Technol. B,12,427 (1994).
3. Hahn, Y B. and Pearton, S. J., “Global Self-Consistent Model of an Inductively Coupled Plasma Etching System”,Korean J. Chem. Eng.,17, 304 (2000).
4. Hahn, Y B., Hays, D. C., Cho, H., Jung, K. B., Lambers, E. S., Abernathy, C. R, Pearton, S. J., Hobson, W. S. and Shul, R. J., “Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part I. GaAs, GaSb and AlGaAs”,Plasma Chem. Plasma Proc,20(3), 405 (2000).
5. Hahn, Y B., Hays, D. C., Cho, H., Jung, K. B., Lambers, E. S., Abernathy, C. R, Pearton, S. J., Hobson, W. S. and Shul, R. J., “Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs”,Plasma Chem. Plasma Proc,20(3), 417 (2000).
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献