An Evaluation of the Equivalent Inverter Modeling Approach
Author:
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Signal Processing
Link
http://link.springer.com/article/10.1007/s00034-017-0692-5/fulltext.html
Reference17 articles.
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3. P. Chaourani, I. Messaris, N. Fasarakis, M. Ntogramatzi, S. Goudos, S. Nikolaidis, An analytical model for the CMOS inverter, in 2014 24th International Workshop on Power and Timing Modeling, Optimization and Simulation, PATMOS (2014)
4. A. Chatzigeorgiou, S. Nikolaidis, I. Tsoukalas, A modeling technique for CMOS gates. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 18(5), 557–575 (1999)
5. E. Consoli, G. Giustolisi, G. Palumbo, An accurate ultra-compact I-V model fornanometer MOS transistors with applications on digital circuits. IEEE Trans. Circuits Syst. 59(1), 159–169 (2012)
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1. Capacitance–resistance modeling of an inverter based on a nanoscale side-contacted field-effect diode with an overshoot suppression approach;Journal of Computational Electronics;2021-07-17
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