Modelling using high-frequency measurements
Author:
SCHREURS DOMINIQUE
Publisher
Springer Netherlands
Reference22 articles.
1. Vandamme, E. P.; Schreurs, D.; van Dinther, C.; Badenes, G.; Deferm, L. “Development of an RF large signal MOSFET model based on an equivalent circuit, and comparison with the BSIM3v3 model”, Solid-State Electron., 2002, 46(3), 353-360. 2. Verspecht, J.; Debie, P.; Barel, A.; Martens, L. “Accurate on wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device”, IEEE MTT-S Int. Microwave Sympos., 1995, 1029-1032. 3. Schreurs, D.; Verspecht, J. “Large-signal modelling and measuring go hand-in-hand: accurate alternatives to indirect S-parameter methods”, Int. J. RF Microwave Comput. -Aided Engrg., 2000, 10(1), 6-18. 4. Schreurs, D.; Rutkowski, J.; Beyer, A.; Nauwelaers, B. “Development of a frequency-domain simulation tool and non-linear device model from vectorial large-signal mea-surements”, Int. J. RF Microwave Comput. -Aided Engrg., 2000, 10(1), 63-72. 5. Schreurs, D.; Wood, J.; Tufillaro, N.; Barford, L.; Root, D. “Construction of behavioural models for microwave devices from time-domain large-signal measurements to speed-up high-level design simulations”, Int. J. RF Microwave Comput. -Aided Engrg., 2003, 13(1), 54-61.
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