Construction of behavioral models for microwave devices from time domain large-signal measurements to speed up high-level design simulations-Reference-Cited by-同舟云学术

Construction of behavioral models for microwave devices from time domain large-signal measurements to speed up high-level design simulations

Published:2002-12-17 Issue:1 Volume:13 Page:54-61
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Schreurs D.,Wood J.,Tufillaro N.,Barford L.,Root D. E.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference17 articles.

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3. and Waveform characterization of microwave power heterojunction bipolar transistors, IEEE MTT-S International Microwave Symposium Digest, 1995, pp. 1239-1242.

4. and Accurate on wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device, IEEE MTT-S International Microwave Symposium Digest, 1995, pp. 1029-1032.

5. Overview of non-linear device modeling methods based on vectorial large-signal measurements, Proceeding of the European Gallium Arsenide and Related III-V Compounds Application Symposium, 1999, pp. 381-386.

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