Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Reference32 articles.
1. S.L. Semiatin and P.A. McQuay, “Segregation and Homogenization of Near-Gamma Titanium Aluminide,”Metallurgical Trans. A, 23A (1992), pp. 149–161.
2. K.F. Hulme and J.B. Mullin, “Indium-Antimonide—A Review of its Preparation, Properties and Device Applications,”Solid-State Electronics, 5 (1962), pp. 211–247.
3. J.B. Mullin, “Segregation in InSb,”Compound Semiconductor V1, Preparation of in-v Compounds, ed. R.K. Willardson and M.L. Goeling (New York: Reinhold Publishing, 1962), pp. 365–381.
4. M. Kurten and J. Schilz, “Czochralski Growth of Si, Ge1−x Single Crystals,”J. Cryst. Growth, 139 (1994), pp. 1–5.
5. J. Schilz and V.N. Romanenko, “Review: Bulk Growth of Silicon-Germanium Solid Solutions,”J. Mat. Sci: Materials in Electronics, 6 (1995), pp. 265–279.
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献