Growth and characterization of AlxGa1−xAs Bragg reflectors by LP-MOCVD-Reference-Cited by-同舟云学术

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Growth and characterization of AlxGa1−xAs Bragg reflectors by LP-MOCVD

Published:1992-03 Issue:3 Volume:21 Page:335-340
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Vernon S. M.,Tobin S. P.,Sanfacon M. M.,Mastrovito A. L.,Karam N. H.,Al-Jassim M. M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02660463.pdf

Reference18 articles.

1. R. L. Thornton, R. D. Burnham, and W. Streifer, Appl. Phys. Lett.45, 1028 (1984).

2. B. G. Kim, E. Garmire, S. G. Hummel and P. D. Dapkus, Appl. Phys. Lett.54, 1095 (1989).

3. S. Ritchie, P. C. Spurdens, N. P. Hewett and M. R. Aylett, Appl. Phys. Lett.55, 1713 (1989).

4. B. G. Sfez, J. L. Oudar, J. C. Michel, R. Kuszelewicz and R. Azoulay, Appl. Phys. Lett.57, 324 (1990).

5. J. Faist, J.-D. Garniere, Ph. Buffat and F.-K. Reinhart, J. Appl. Phys.66, 1023 (1989).

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1. Simultaneous determination of the compositions and thicknesses of a multilayer film using spectroreflectometry;Journal of Applied Physics;1998-09-15

2. Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis;Journal of Crystal Growth;1995-03

3. Characteristics of a distributed Bragg reflector for the visible‐light spectral region using InGaAlP and GaAs: Comparison of transparent‐ and loss‐type structures;Journal of Applied Physics;1993-09

4. Characterization of vertical‐cavity semiconductor structures;Journal of Applied Physics;1992-12-15

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