Photoluminescence of transition metal complexes in silicon-Reference-Cited by-同舟云学术

Photoluminescence of transition metal complexes in silicon

Published:1987-01 Issue:1 Volume:42 Page:1-18
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Conzelmann H.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00618154.pdf

Reference110 articles.

1. A. Rohatgi, J.R. Davies, R.H. Hopkins, P. Rai-Chondhury, P.G. McMullin, J.R. McCormick: Sol. State Electron.23, 415 (1980)

2. R.H. Hopkins, R.G. Seidensticker, J.R. Davies, P. Rai-Chondhury, P.D. Blais, J.R. McCormick: J. Crystl. Growth42, 493 (1977)

3. H. Lemke: Phys. Stat. Solidi (a)64, 215 (1981)

4. E.R. Weber: Appl. Phys. A30, 1 (1983)

5. K. Graff: Proc. 5th Intern. Symp. on Silicon Materials Science and Technology, Semiconductor Silicon (1986) ed. by H.R. Huff, T. Abe, B. Kolbesen, p. 751

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