Anomalous diffusion effects in silicon (a review)-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Anomalous diffusion effects in silicon (a review)

Published:1968-01 Issue:1 Volume:3 Page:89-98
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Willoughby A. F. W.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00550894.pdf

Reference40 articles.

1. H. Reiss and C. S. Fuller, ?Semiconductors?, edited by N. B. Hannay (Reinhold, New York, 1959) p. 222.

2. B. I. Boltaks, ?Diffusion in Semiconductors? (Infosearch, London, 1963).

3. R. M. Burger and R. P. Donovan, ?Fundamentals of Silicon Integrated Device Technology? Vol. 1 (Prentice Hall, New Jersey, 1967).

4. R. L. Longini and R. F. Greene, Phys. Rev. 102 (1956) 992.

5. M. W. Valenta and C. Ramasastry, ibid 106 (1957) 73.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments;Journal of Materials Science;2006-02

2. Fundamental Concepts;Computational Microelectronics;2004

3. Nonequilibrium point defects and diffusion in silicon;Materials Science and Engineering: R: Reports;1994-10-15

4. Interactions between sequential dopant diffusions in silicon-a review;Journal of Physics D: Applied Physics;1977-03-11

5. Crystal Defects in Silicon Integrated Circuits—Their Cause and Effect;Properties and Microstructure;1977

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP