Establishment of a dynamic model for the p-Ge far IR laser-Reference-Cited by-同舟云学术

Establishment of a dynamic model for the p-Ge far IR laser

Published:1995-01 Issue:1 Volume:16 Page:3-32
ISSN:0195-9271
Container-title:International Journal of Infrared and Millimeter Waves
language:en
Short-container-title:Int J Infrared Milli Waves

Author:

Coleman Paul D.,Wierer Jonathan J.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Link

http://link.springer.com/content/pdf/10.1007/BF02085845.pdf

Reference18 articles.

1. A. A. AndronovSubmillimeter Wave Lasers in Semiconductors Using Hot Holes Academy of Sciences of USSR, Int of App. Phys., Gorky 1986. (This book contains over a hundred references on the p-Ge laser as of 1986.)

2. See special issue of Optical and Quantum Electronics25, (1993). (These papers represent current p-Ge work as of 1993).

3. S. A. Stoklitskiy “Quantum States Interaction in Hot Carrier Accumulation and Stimulated Emission Processes in p-Ge,” Semicond. Sci. Tech1, B610 (1992).

4. C. Kremser et al “Stimulated Emission from p-Ge due to Transitions between Light-hole Landau Levels and Excited States of Shallow Impurities,” Appl. Phys. Lett.60, 1785 (1992).

5. P. D. Coleman and C. Moe “Laser Mechanisms and Processes in the p-Ge Far IR Laser,” Int. Jour. of Infrared and MillimeterWaves14, 903 (1993).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Problems of realizing a long pulse length, high duty cycle p-Ge landau level fir laser;International Journal of Infrared and Millimeter Waves;1997-06

2. Experimental-theoretical Landau energy level data and its use in making p-Ge laser transition assignments;International Journal of Infrared and Millimeter Waves;1996-06