Author:
Scholtz A. L.,Kehrer D.,Tiebout M.,Wohlmuth H. -D.,Knapp H.,Wurzer M.,Perndl W.,Rest M.,Kienmayer C.,Thüringer R.,Bakalski W.,Simbürger W.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Reference19 articles.
1. Böck, J. et al. (2002): Sub 5ps SiGe bipolar technology. International electron devices meeting (IEDM), Dec.: 763–766.
2. Kehrer, D. et al. (2003): 40-Gb/s 2:1 multiplexer and 1:2 demultiplexer in 120 nm standard CMOS. Int. Solid-State Circuits Conf., San Francisco, ISSCC, February 2003.
3. Knapp, H. et al. (2002): 25 GHz static frequency divider and 25 Gb/s multiplexer in 0.12 µm CMOS. IEEE Int. Solid-State Circuits Conf. ISSCC 2002, San Francisco, Feb. 3–7: 302–303.
4. Knapp, H. et al. (2003): 86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology. International Microwave Symposium, IEEE, June 2003: 1067–1070.
5. Krishnan, S. et al. (2002): 87 GHz static frequency divider in an InP-based Mesa DHBT technology. GaAs IC Symposium Digest. Oct.: 294–296.