Polymers as masks for Ion implantation-Reference-Cited by-同舟云学术

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Polymers as masks for Ion implantation

Published:1987-01 Issue:1 Volume:16 Page:33-38
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Papanicolaou N. A.,Thompson P. E.,Corazzi R. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02667788.pdf

Reference9 articles.

1. A. G. Foyt, W. T. Lindley, C. M. Wolfe, and J. P. Donnelly, Solid State Electron.12, 209 (1969).

2. D. J. Elliott, SPIE174, 153 (1979).

3. T. O. Herndon, R. L. Burke, and J. A. Yassaitis, Solid State Technol., Nov. 1984, pp. 179-183.

4. J. H. Lai, and S. A. Jenekhe, Solid State Technol,27, No. 11, Nov. 1984.

5. P. A. Ruggerio, Solid State Technol.27, No. 3, March 1984.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-energy (MeV) ion implantation and its device applications in GaAs and InP;IEEE Transactions on Electron Devices;1993-06

2. Depth profiling and secondary ion mass spectrometry relative sensitivity factors and systematics for polymers/organics;Journal of Applied Physics;1993-03

3. Ion implantation ranges and range straggles in organic polymers and comparison with calculations;Journal of Applied Physics;1993-03

4. MeV ion implantation in GaAs technology;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07

5. Photodetectors fabricated on heteroepitaxial GaAs/Si structures grown by molecular beam epitaxy;Superlattices and Microstructures;1990-01

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