Photoelectrical characteristics of as-grown highresistance GaAs single crystals-Reference-Cited by-同舟云学术

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Photoelectrical characteristics of as-grown highresistance GaAs single crystals

Published:2010-06 Issue:1 Volume:53 Page:44-48
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Budnitskii D. L.,Koretskaya O. B.,Тоlbanov О. P.,Tyazhev А. V.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-010-9385-2.pdf

Reference12 articles.

1. S. S. Khludkov, O. P. Tolbanov, D. L. Budnitskii, Russ. Phys. J., No. 8, 768‒772 (1998).

2. A. V. Tyazhev, D. L. Budnitskii, O. B. Koretskaya, еt al., Nucl. Instrum. Methods Phys. Res., 509, 34–39 (2003).

3. D. L. Budnitskii, V. A. Novikov, O. P. Tolbanov, and I. A. Prudaev, Russ. Phys. J., No. 5, 531‒535 (2008).

4. S. M. Ryvkin, Photoelectrical Phenomena in Semiconductors [in Russian], Fizmatgiz, Moscow, 1963.

5. A. Rose, Concepts in Photoconductivity and Allied Problems, Wiley and Sons, New York, 1963.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs Pixel Detectors;MRS Proceedings;2013

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