GaAs Pixel Detectors-Reference-Cited by-同舟云学术

GaAs Pixel Detectors

Published:2013 Issue: Volume:1576 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Tyazhev A.,Budnitsky D.,Mokeev D.,Novikov V.,Zarubin A.,Tolbanov O.,Shelkov G.,Hamann E.,Fauler A,Fiederle M.,Procz S.

Abstract

ABSTRACTResults of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in this work. HR GaAs material is shown to have the following physical parameters: the resistivity about 1GOhm*cm, the nonequilibrium charge carrier lifetime – hundreds of nanoseconds. Prototypes of microstrip and array HR GaAs sensors have been manufactured and tested. It is demonstrated that the sensors provide spatial resolution according to the pixel pitch and allow obtaining high quality X-ray images.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference9 articles.

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4. 4. Novikov Vladimir A. , Koretskaya Olga B. , Mokeev Dmitry Y. , Tolbanov Oleg P. , Ryabkov Sergey A. , Tyazhev Anton V. , and Ayzenshtat Gennady I. , GaAs radiation imaging detectors for nondestructive testing, medical, and biological applications// Hard X-Ray and Gamma- Ray Detector Physics VII. Proceeding of SPIE, Vol. 5922, 59220Q-1. 1–3August 2005, San Diego, California, USA.

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