Channeling and RHEED analyses of Pb-implantation in silicon-Reference-Cited by-同舟云学术

Channeling and RHEED analyses of Pb-implantation in silicon

Published:1978-02 Issue:2 Volume:15 Page:233-237
ISSN:0340-3793
Container-title:Applied Physics
language:en
Short-container-title:Appl. Phys.

Author:

Campisano S. U.,Ciavola G.,Vitali G.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF00928215.pdf

Reference9 articles.

1. G.Dearnaley, J.H.Freeman, R.S.Nelson, S.Stephan:Ion Implantation (North-Holland, Amsterdam, London 1973)

2. H.Muller, W.K.Chu, J.Gyulai, J.W.Mayer, T.W.Sigmon, R.T.Can: Appl. Phys. Lett.26, 292 (1975)

3. L.Eriksson, J.A.Davies, N.G.E.Johansson, J.W.Mayer: J. Appl. Phys.40, 842 (1969)

4. B.Svenningsen, A.Johansen, L.T.Chadderton, J.L.Whitton: The Application of Ion Beams to Materials (Inst. of Phys. Conference Ser. n. 28, 1976) p. 142

5. J.S.Williams: In:Ion Beam Surface Layer Analysis ed. by O.Meyer, G.Linker and F.Käppler (Plenum Press, New York 1975) Vol. 1, p. 220

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