FGTO — A fine structured GTO-thyristor with improved switching characteristics-Reference-Cited by-同舟云学术

FGTO — A fine structured GTO-thyristor with improved switching characteristics

Published:1991-11 Issue:6 Volume:74 Page:433-444
ISSN:0003-9039
Container-title:Archiv für Elektrotechnik
language:en
Short-container-title:Archiv f. Elektrotechnik

Author:

Gerlach W.,Qu N.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,Applied Mathematics,Electrical and Electronic Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF01577465.pdf

Reference17 articles.

1. Azuma, M.; Kurata, M.; Takigami, K.: 2500-V 600-A gate turn-off thyristor (GTO). IEEE Trans. ED-28 (1981) 270–274

2. Nagano, T.; Yatsuo, T.; Okamura, M.: Characteristics of a 3000 V, 1000 A gate turn-off thyristor. IEEE Conf. Rec. of The Industrial Application Society Meeting (1981) 750–753

3. Tada, A.; Hagino, H.: A high-voltage, high-power, fast switching gate turn-off thyristor. in IEDM Tech. Dig. (1982) 66–73

4. Yatsuo, T.; Nagano, T.; Fukui, H.; Okamura, M.; Sakurada, S.: Ultrahigh-voltage high-current gate turn-off thyristors. IEEE Trans. ED-31 (1984) 1681–1686

5. Bechteler, M.: The gate-turnoff thyristor (GTO). Siemens Forsch.-u. Entwickl.-Ber. 14 (1985) 39–44

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