Ultrahigh-voltage high-current gate turn-off thyristors-Reference-Cited by-同舟云学术

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Ultrahigh-voltage high-current gate turn-off thyristors

Published:1984-12 Issue:12 Volume:31 Page:1681-1686
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yatsuo T.,Nagano T.,Fukui H.,Okamura M.,Sakurada S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31909/01484056.pdf?arnumber=1484056

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thyristors for Power Electronics;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

2. Thyristor;Elektrische Antriebe 3;1996

3. The effect of emitter shortings on turn-off limitations and device failure in GTO thyristors under snubberless operation;IEEE Transactions on Electron Devices;1995

4. Models of dependence of controllable current on number of islands in gate turn-off thyristors;IEEE Transactions on Electron Devices;1994-05

5. Two-dimensional analysis of GTO switching under the influence of external circuit;IEE Proceedings - Circuits, Devices and Systems;1994

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