Influence of arsenic overpressure on Light-Output and degradation behavior of GaAsP: Se Led’s-Reference-Cited by-同舟云学术

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Influence of arsenic overpressure on Light-Output and degradation behavior of GaAsP: Se Led’s

Published:1977-11 Issue:6 Volume:6 Page:581-595
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Hämmerling} H.,Huber D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02660339.pdf

Reference21 articles.

1. H. Schade, C.J. Nuese and J.J. Gannon, J. Appl. Phys.42, 5072 (1971).

2. H. Hämmerling, D. Huber and R. Geiss, Solid State Devices Conf. Univ. Nottingham 1973. H. Hämmerling and D. Huber, ESSDERC 1975, Univ. Grenoble.

3. R.H. Weismann, W.L. Snyder, G.T. Ikari and T.L. Larsen, IEEE Proc. Reliability Conf., Las Vegas 1974, p. 273.

4. H. Okamoto, S. Nakaya and Y. Arai, IEEE Proc. Reliability Conf., Las Vegas 1973, P-261.

5. W.A. Brantley and D.A. Harrison, IEEE Proc. Reliability Conf., Las Vegas 1973, p. 267.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Behavior of types A and B hole traps in n-type GaAs during long-period operation;Solid-State Electronics;1992-09

2. Chapter 1 III-V Compounds;Semiconductors and Semimetals;1988

3. A Tentative Identification of Certain Deep Levels in GaAs and Related Compounds;MRS Proceedings;1985

4. VP Related Defects in Diffused GaP:N Diodes;Physica Status Solidi (a);1984-08-16

5. Chapter 1 The Effect of Crystal Defects on Optoelectronic Devices;Defects, (HgCd)Se, (HgCd)Te;1981

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