Author:
Yuanxi Zou,Yuanhsi Chou,Peigen Mo,Qianzhi Yang,Huifang Min,Guicheng Zhang
Abstract
AbstractSome recent data on minority carrier diffusion length MCDL in GaAs and certain optoelectric parameters of LEDs obtained by the authors as well as reported in the literature have been analysed to shed light on the probable configuration of certain deep levels in GaAs and related compounds. The practical implications of the results obtained are discussed from the view point of the mechanism of slow degradation of the related optoelectronic devices.
Publisher
Springer Science and Business Media LLC
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