Comparison of doping profiles in capless annealed and dielectrically capped — Annealed ion implanted GaAs-Reference-Cited by-同舟云学术

Comparison of doping profiles in capless annealed and dielectrically capped — Annealed ion implanted GaAs

Published:1980-09 Issue:5 Volume:9 Page:857-868
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Siu D. P.,Immorlica A. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02822722.pdf

Reference8 articles.

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2. R. M. Malbon, D. H. Lee, and J. M. Whelan, J. Electrochem. Soc.123, 1413 (1976).

3. J. Kasahara, M. Arai, and N. Watanabe, J. Appl. Phys.50, 541 (1979).

4. J. R. Arthur, J. Phys. Chem. Solids28, 2257 (1967).

5. J. F. Gibbons, W. S. Johnson, and S. W. Mylroie, “Projected Range Statistics: Semiconductors and Related Materials,” (Dowden, Hutchinson, Ross, New York, 1975), 2nd ed.

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1. SUPREM 3.5-process modeling of GaAs integrated circuit technology;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1989

2. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

3. Ion implantation and diffusion of Zn in GaAs;Journal of Applied Physics;1984-01-15

4. The Effect of Stress on the Redistribution of Implanted Impurities in GaAs;Journal of The Electrochemical Society;1983-11-01

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