Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products-Reference-Cited by-同舟云学术

Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products

Published:1985-12 Issue:4 Volume:5 Page:333-351
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chem Plasma Process

Author:

Picard A.,Turban G.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00566008.pdf

Reference21 articles.

1. T. P. Chow and A. J. Steckl,J. Electrochem. Soc. 131 2325 (1984).

2. T. P. Chow, A. N. Saxena, L. M. Ephrath, and R. S. Bennett,Dry Etching for Microelectronics, R. A. Powell, ed., Elsevier, Amsterdam (1984), Chapter 2.

3. J. W. Coburn, unpublished results, cited by A. Dilks and E. Kay inPlasma Polymerization, ACS Symp. Ser. No. 108, 195 (1979).

4. G. Turban and M. Rapeaux,J. Electrochem. Soc. 130 2231 (1983).

5. A. Picard, Thesis, Nantes, France, November 1984.

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