Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etching
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/BF02773282.pdf
Reference14 articles.
1. Morita, S., Tamano, J., Hattory, S., and Ieda, M., Plasma Polymerized Methyl Methacrylate as an Electron-Beam Resist,J. Appl. Phys., 1980, vol. 51, no. 7, pp. 3938–3941.
2. Yamada, M., Tamano, J., Yoneda, K., Morita, S., Hattory, S., and Ieda, M., Electron-Beam Vacuum Lithography Using a Plasma Copolymerized MMA-TMT Resist,Jpn. J. Appl. Phys., 1982, vol. 21, no. 5, pp. 768–771.
3. Tawata, M., Kato, H., Morita, S., and Hattori, S., Totally Dryed Three-Layer Resist Process Using Evaporated Fatty Acid,J. Elecrochem. Soc., 1993, vol. 14b, no. 3, pp. 861–865.
4. Moreau, W.,Semiconductor Lithography, New York: Plenum, 1988, part 1. Translated under the titleMikrolitografiya, Moscow: Mir, 1990.
5. Roland, B., Surface Imaging Techniques,Microelectron. Eng., 1991, vol. 13, pp. 11–18.
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