Electrical Performance of the Side Region in a Multi-crystalline Silicon Ingot
Author:
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s12633-024-02878-0.pdf
Reference8 articles.
1. Ohshita Y, Miyamura Y, Takeda T, Saito Y, Nakashima S (2005) Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon. J Cryst Growth 275:e491–e494
2. Macdonald D, Cuevas A, Kinomura A, Nakano Y, Geerlings LJ (2005) Transition-metal profiles in a multicrystalline silicon ingot. J Appl Phys 97:033523
3. Hu D, Yuan S, Yu X, He L, Xu Y, Zhang D (2017) Grain boundary engineering of high-performance multicrystalline silicon: control of iron contamination at the ingot edge. Sol Energy Mater Sol Cells 171:131–135
4. Pickett MD, Buonassisi T (2008) Iron point defect reduction in multicrystalline silicon solar cells. Appl Phys Lett 92:122103
5. Trupke T, Bardos RA, Schubert MC, Warta W (2006) Photoluminescence imaging of silicon wafers. Appl Phys Lett 89:044107
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