Double Gate 6H-Silicon Carbide Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor
Author:
Funder
University Grants Commission
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02273-7.pdf
Reference31 articles.
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5. Dwivedi P, Kranti A (2017) Applicability of transconductance-to-current ratio (gm/ids) as a sensing metric for tunnel FET biosensors. IEEE Sens J 17(4):1030–1036
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