Analog/RF and Power Performance Analysis of an Underlap DG AlGaN/GaN Based High-K Dielectric MOS-HEMT-Reference-Cited by-同舟云学术

Analog/RF and Power Performance Analysis of an Underlap DG AlGaN/GaN Based High-K Dielectric MOS-HEMT

Published:2021-02-22 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Roy Akash^ORCID,Mitra Rajrup^ORCID,Mondal Arnab,Kundu Atanu

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-021-01020-8.pdf

Reference40 articles.

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4. Mishra UK, Shen L, Kazior TE, Wu Y-F (2008) GaN-based RF power devices and amplifiers. Proc IEEE 96(2):287–305

5. Chen J, Luo Q, Huang J, He Q, Du X (2019) A complete switching analytical model of low-voltage eGaN HEMTs and its application in loss analysis. IEEE Trans Ind Electron 67(2):1615–1625

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