Analog/RF and Power Performance Analysis of an Underlap DG AlGaN/GaN Based High-K Dielectric MOS-HEMT

Author:

Roy AkashORCID,Mitra RajrupORCID,Mondal Arnab,Kundu Atanu

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference40 articles.

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3. Paul BC, Bansal A, Roy K (2006) Underlap DGMOS for digital-subthreshold operation. IEEE Trans Electron Devices 53(4):910–913

4. Mishra UK, Shen L, Kazior TE, Wu Y-F (2008) GaN-based RF power devices and amplifiers. Proc IEEE 96(2):287–305

5. Chen J, Luo Q, Huang J, He Q, Du X (2019) A complete switching analytical model of low-voltage eGaN HEMTs and its application in loss analysis. IEEE Trans Ind Electron 67(2):1615–1625

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