Analytical Modelling and Simulation of Si-Ge Hetero-Junction Dual Material Gate Vertical T-Shaped Tunnel FET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-020-00505-2.pdf
Reference30 articles.
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5. Krishnamohan T, Kim DH, Raghunathan S, Saraswat K (2008) Dual-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and≪ 60mV/dec subthreshold slope. In 2008 IEEE International Electron Devices Meeting, pp. 1–3. IEEE. https://doi.org/10.1109/IEDM.2008.4796839
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