Preparation and Characteristics Study of High-Quantum Efficiency Ni/PSi/c-Si and cd/PSi/c-Si Double-Junction Photodetectors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01845-x.pdf
Reference28 articles.
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2. Hadi HA (2014) Comparative Study of Schottky Barrier Heights of the Different Metals Based on Porous Silicon Prepared by Photo-Electrochemical Etching (PECE). Mater Focus 3(6):438–443
3. Hadi HA, Ismail RA, Habubi NF (2014) Optoelectronic properties of porous silicon heterojunction photodetector. Indian J Phys 88:59–63. https://doi.org/10.1007/s12648-013-0375-4
4. Hadi HA, Ismail RA, Almashhadani NJ (2019) Preparation and Characteristics Study of Polystyrene/Porous Silicon Photodetector Prepared by Electrochemical Etching. J Inorg Organomet Polym 29:1100–1110. https://doi.org/10.1007/s10904-019-01072-9
5. Soboleva E, Geydt P, Zakharchuk I, Spivak Y, Moshnikov V, Lähderanta E (2018) Properties of Porous Silicon Precipitated with Nickel for Gas Sensors. Sensor Lett 16:672–676
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