Controlling of Floating-Body and Thermal Conductivity in Short Channel SOI MOSFET at 30 nm Channel Node

Author:

Dutta PradiptaORCID,Behera SubhashreeSoubhagyamayee,Rout Soumendra Prasad

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Mahabadi SJ (2016) Upper drift region double step partial soildmosfet: a novel device for enhancing breakdown voltage and output characteristics. Superlattice Microst 89:345–354

2. Zareiee M (2017) High performance nano device with reduced short channel effects in high temperature applications. ECS Journal of Solid State Science and Technology 6(7):M75

3. Boyd DC, Holt JR, Ieong M, Mo RT, Ren Z, Shahidi GG (Feb. 21 2006) Ultra-thin body super-steep retrograde well (ssrw) fet devices. US Patent 7,002,214

4. Choi Y-K, Asano K, Lindert N, Subramanian V, King T-J, Bokor J, Hu C (1999) Ultra-thin body soimosfet for deep-sub-tenth micron era, in International Electron Devices Meeting 1999. Technical Digest (Cat. No. 99CH36318), pp. 919–921, IEEE

5. Jain N, Raj B (2020) Soifinfet for computer networks and cyber security systems, in Handbook of Computer Networks and Cyber Security, pp. 295–311, Springer

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