Analysis of Thermomechanical Stresses in Silicon During Heating of Aluminum Interconnects on its Surface by a Pulse Current-Reference-Cited by-同舟云学术

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Analysis of Thermomechanical Stresses in Silicon During Heating of Aluminum Interconnects on its Surface by a Pulse Current

Published:2023-02-27 Issue:10 Volume:15 Page:4417-4424
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Skvortsov Arkady A.,Nikolaev Vladimir K.,Koryachko Marina V.,Skvortsov Pavel A.,Volkov Evgeniy I.

Funder

Russian Science Foundation

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-023-02353-2.pdf

Reference20 articles.

1. Shih M-K, Huang Y-W, Lin G-S (2022) Next-Generation High-Density PCB Development by Fan-Out RDL Technology. IEEE Trans Device Mater Reliab 22(2):296–305

2. Chang-Chun L, Yen-Fu S, Chih-Sheng W, Kuo-Ning C (2013) Investigation of interconnect design on interfacial cracking energy of Al/TiN barriers under a flexural load. Thin Solid Films 544:530–536

3. Liang C-L, Lin Y-S, Kao C-L, Lin G-T, Lin K-L (2020) Athermal and thermal coupling electromigration effects on the microstructure and failure mechanism in advanced fine-pitch Cu interconnects under extremely high current density. Mater Chem Phys 256:123680

4. Ceric H, Selberherr S, Zahedmanesh H, Croes K, Ceric H (2021) Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects. ECS J Solid State Sci Technol 10(3):035003

5. Ahmad SS, Smith SC (2019) Au/Al Wire Bond Interface Resistance Degradation Rate Simulations. IEEE Trans Device Mater Reliab 19(4):774–781

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1. Features of the occurrence of mechanical stresses in the semiconductor substrate when operating in thermal cycling mode;Third International Conference on Optics, Computer Applications, and Materials Science (CMSD-III 2023);2024-02-20

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