RF and Linearity Parameter Analysis of Junction-less Gate All Around (JLGAA) MOSFETs and their dependence on Gate Work Function
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01312-z.pdf
Reference27 articles.
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3. Das SK., Nanda U, Biswal SM. et al. Performance Analysis of Gate-Stack Dual-Material DG MOSFET Using Work-Function Modulation Technique for Lower Technology Nodes. Silicon (2021). https://doi.org/10.1007/s12633-021-01095-3
4. Lee Y, Blaauw D, Sylvester D(2016) Ultralow power circuit design for wireless sensor nodes for structural health monitoring. Proc IEEE 104(8):1529–1546
5. Nitayama A, Takato H, Okabe N, Sunouchi K, Hieda K, Horiguchi F, Masuoka F (1991) Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits. IEEE Trans Electron Devices 38(3):579
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