Investigation of Novel Low Bandgap Source Material for Hetero-dielectric GAA-TFET with Enhanced Performance

Author:

Anamul Haque Afreen,Mishra VarunORCID,Verma Yogesh Kumar,Gupta Santosh Kumar

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Proposal and evaluation of Mg2Si-based vertical tunnel field effect transistor for enhanced performance;Materials Science and Engineering: B;2024-10

2. Design and Analysis of Novel Heterodielectric Double Metal(DM)-Triple Gate-Tunnel Field-Effect Transistors(FET): A Path to Ultra-Low Power Implementations;Transactions on Electrical and Electronic Materials;2024-06-03

3. Unlocking the Tunnel: A Review of Tunnel Field-Effect Transistors Technology;2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT);2024-03-15

4. Process Variation Impact on Dual Dielectric Gate-All-Around Tunnel FETs;2024 International Conference on Computer, Electrical & Communication Engineering (ICCECE);2024-02-02

5. Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET;Silicon;2022-09-14

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