A Physics Based Threshold Voltage Modeling of Trigate Junctionless FinFETs Considering Gaussian Doping
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01195-0.pdf
Reference31 articles.
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4. Taur Y et al (1997) CMOS scaling into the nanometer regime. Proc IEEE 85(4):486–503. https://doi.org/10.1109/5.573737
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1. Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach;Semiconductor Science and Technology;2022-07-07
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