Impact of High-temperature and Interface Traps on Performance of a Junctionless Tunnel FET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02191-8.pdf
Reference52 articles.
1. Colinge JP, Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O’Neill B, Blake A, White M, Kelleher AM, McCarthy B, Murphy R (2010) Nanowire transistors without junctions. Nat Nanotechnol 5:225–322
2. Colinge JP, Kranti A, Yan R, Lee CW, Ferain I, Yu R, Dehdashti AN, Razavi P (2011) Junctionless nanowire transistor (JNT): Properties and design guidelines. Solid State Electron 65:33–37
3. Strangio S, Palestri P, Esseni D, Selmi L, Crupi F, Richter S, Zhao QT, Mantl S (2015) Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells. IEEE J Electron Devices Soc 3:223–232
4. Gedam A, Acharya B, Mishra GP (2021) Junctionless silicon nanotube TFET for improved DC and radio frequency performance. Silicon 13:167–178
5. Nigam K, Gupta S, Pandey S, Kondekar PN, Sharma D (2018) Controlling the ambipolarity and improvement of RF performance using Gaussian Drain Doped TFET. Int J Electron 105:806–816
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1. Performances of gate stacked heterojunction SELBOX and SOI tunnel FETs including interface trap charges: A simulation study;Materials Science and Engineering: B;2024-02
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