An Insight into the DC and Analog/RF Response of a Junctionless Vertical Super-Thin Body FET towards High-K Gate Dielectrics
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01393-w.pdf
Reference39 articles.
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5. Zhang X, Connelly D, Takeuchi H, Hytha M, Mears RJ, Liu TK (2017) Comparison of SOI versus bulk FinFET technologies for 6T-SRAM voltage scaling at the 7−/8-nm node. IEEE Trans Electron Devices 64(1):329–332. https://doi.org/10.1109/TED.2016.2626397
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