Comparative Study of Analog Parameters for Various Silicon-Based Tunnel Field-Effect Transistors-Reference-Cited by-同舟云学术

Comparative Study of Analog Parameters for Various Silicon-Based Tunnel Field-Effect Transistors

Published:2022-02-01 Issue:15 Volume:14 Page:9223-9235
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Sreevani Alluru,Swarnakar Sandip^ORCID,Krishna Sabbi Vamshi

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01674-y.pdf

Reference43 articles.

1. Saurabh S, Kumar MJ (2016) Fundamentals of tunnel field-effect transistors. 1st Edition. CRC Press. https://doi.org/10.1201/9781315367354

2. Saxena S, Tripathi SL, Sinha SK, Patel GS, Pravalika C (2019) Review on performance evaluation of TFET Structures & its Applications. THINK INDIA J 22(16):220–227

3. Schaller RR (1997) Moore’s law: past, present and future. IEEE Spectr 34(6):52–59

4. Reddy NN, Panda DK (2020) A comprehensive review on tunnel field-effect transistor (TFET) based biosensors: recent advances and future prospects on device structure and sensitivity. Silicon. https://doi.org/10.1007/s12633-020-00657-1

5. Datta S, Liu H, Narayan V (2014) Tunnel FET tech.: a reliability perspective. Microelectron Reliabil 54(5):861–874

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of hole trap-detrap mechanism on X-ray irradiation induced threshold voltage shift of radiation-hardened GAA TFET device;Microelectronics Reliability;2023-06

2. Assessment of Negative Bias Temperature Instability Due to Interface and Oxide Trapped Charges in Gate-All-Around TFET Devices;IEEE Transactions on Nanotechnology;2023