Improving Heat Transfer Properties of DS furnace by the Geometrical Modifications for Enhancing the Multi Crystalline Silicon Ingot (mc-Si) Quality Using Transient Simulation-Reference-Cited by-同舟云学术

Improving Heat Transfer Properties of DS furnace by the Geometrical Modifications for Enhancing the Multi Crystalline Silicon Ingot (mc-Si) Quality Using Transient Simulation

Published:2018-04-18 Issue:2 Volume:11 Page:603-613
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Nagarajan S. G.,Srinivasan M.,Aravinth K.,Ramasamy P.

Funder

Ministry of New and Renewable Energy India

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12633-018-9870-8.pdf

Reference32 articles.

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2. Sopory B, Rupnowski P, Mehta V, Budhraja V, Johnston S, Call N, Moulinho H, Al-Jassim M (2009) Performance Limitations of mc-Si Solar Cells Caused by Defect Clusters Conference paper NRWL/CP-520-45012

3. Ganesan NS, Manickam S, Karuppanan A, Perumalsamy R (2016) Simulation analysis on impurity distribution in mc-Si grown by directional solidification for solar cell applications . Int J Mater Res 107:1–9. https://doi.org/10.3139/146.111375

4. Wang TY, Hsu SL, Fei CC, Yei KM, Hsu WC, Lan CW (2009) Grain control using spot cooling in multi-crystalline silicon crystal growth 311, 263–267. https://doi.org/10.1016/j.jcrysgm.2008.10.064

5. Zhou N, Lin M, Zhou L, Hu Q, Fang H, Wang S (2013) A modified cooling process in directional solidification of multicrystalline silicon. J Cryst Growth 381:22–26. https://doi.org/10.106/j.jcrysgro.2013.06.036

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