Quality improvement of multi-crystalline silicon ingot by the Hot-Zone modification-Reference-Cited by-同舟云学术

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Quality improvement of multi-crystalline silicon ingot by the Hot-Zone modification

Published:2022-08 Issue: Volume:592 Page:126720
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gurusamy Aravindan,Manickam Srinivasan,Perumalsamy Ramasamy

Funder

Ministry of New and Renewable Energy India

Human Resource Development Group

Council of Scientific and Industrial Research, India

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots;Trempa;J. Crystal Growth,2019

2. Random angle grain boundary formation and evolution dynamics during Si directional solidification;Tsoutsouva;Acta Materialia,2019

3. Influence of modified bottom insulation on the seeded directional solidification process for high-performance multi-crystalline silicon;Rao;Vacuum,2020

4. Chenlei W and Bo Zhao, Modeling and improvement of silicon ingot directional solidification for industrial production systems;Wei;Sol. Energy Mater. Sol. Cells,2009

5. Thermal system design and optimization of an industrial silicon directional solidification system;Ma;J. Cryst. Growth,2011

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A dynamic thermal radiation insulation method for directional solidification of polysilicon;Case Studies in Thermal Engineering;2024-09

2. Study of Porous Silicon Layer Effect in Optoelectronics Properties of Multi-Crystalline Silicon for Photovoltaic Applications;Silicon;2023-05-04

3. Recent progress in the research and development of natural graphite for use in thermal management, battery electrodes and the nuclear industry;New Carbon Materials;2023-02

4. Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process;Silicon;2022-11-30

5. Investigation of DS Furnace Heat Exchange Block Thickness for the Improvement mc-Si Ingot Quality;Silicon;2022-10-18

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