A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01128-x.pdf
Reference37 articles.
1. Musalgaonkar G, Sahay S, Saxena RS, Kumar MJ (2019) Nanotube tunneling FET with a core source for ultrasteep subthreshold swing: A simulation study. IEEE Trans Electron Devices 66:4425–4432. https://doi.org/10.1109/TED.2019.2933756
2. Bhol K, Nanda U (2021) Nanowire Array-based MOSFET for Future CMOS Technology to Attain the Ultimate Scaling Limit. Silicon. https://doi.org/10.1007/s12633-020-00909-0
3. Yin X, Zhang Y, Zhu H, Wang GL (2020) Vertical Sandwich gate-all-around field-effect transistors with self-aligned high-k metal gates and small effective-gate-length variation. IEEE Electron Device Lett 41:8–11. https://doi.org/10.1109/LED.2019.2954537
4. Yoon J, Lee S, Lee J, Jeong J, Yun H, Baek R (2020) Reduction of process variations for Sub-5-nm node fin and Nanosheet FETs using novel process scheme. IEEE Trans Electron Devices 67:2732–2737. https://doi.org/10.1109/TED.2020.2995340
5. Ryu D, Kim M, Kim S, Choi Y, Yu J, Lee J-H, Parket B-G (2020) Design and optimization of triple-k spacer structure in two-stack Nanosheet FET from OFF-state leakage perspective. IEEE Trans Electron Devices. 67:1317–1322. https://doi.org/10.1109/TED.2020.2969445
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design insights into a junctionless nanosheet FET (JL-NSFET) for switching and Analog/RF applications: Device to circuit level assessment;Microelectronics Journal;2024-07
2. Optimization of junctionless stacked nanosheet FET – RF stability perspective;Microelectronics Journal;2024-03
3. Performance Comparison of Junctionless FinFET with Nanosheet FET and Device Design Guidelines;Indian Journal of Pure & Applied Physics;2024
4. DC and RF Performance Analysis of Junctionless Gate All Around Nanosheet MOSFET;2023 IEEE 9th International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE);2023-11-25
5. Optimization of vertically stacked nanosheet FET immune to self-heating;Micro and Nanostructures;2023-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3