1. International Roadmap for Devices and Systems (irdsTM);Moore,2022
2. Stacked nanosheet gate-all-around transistor to enable scaling beyond finfet;Loubet,2017
3. Channel geometry impact and narrow sheet effect of stacked nanosheet;Yeung,2018
4. Vertically stacked gate-all-around si nanowire cmos transistors with dual work function metal gates;Mertens,2016
5. 7-levels-stacked nanosheet gaa transistors for high performance computing;Barraud,2020