Tweaking the Performance of Dopingless Nano-TFET with Misaligned Sandwiched Dual-Gate Structure
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-00956-1.pdf
Reference46 articles.
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4. Yadav S, Sharma D, Chandan BV, Aslam M, Soni D, Sharma N (2018) A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour. Superlattice Microst 117:9–17. https://doi.org/10.1016/j.spmi.2018.02.005
5. Bangsaruntip S, Cohen GM, Majumdar A, Sleight JW (2010) Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Electron Device Lett 31(9):903–905. https://doi.org/10.1109/LED.2010.2052231
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