Design and Investigation of F-shaped Tunnel FET with Enhanced Analog/RF Parameters
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01420-w.pdf
Reference35 articles.
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4. Toh E-H, Wang GH, Chan L, Samudra G, Yeo Y-C, physics Device (2007) guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction. Appl Phys Lett 91(24):243505
5. Raad BR, Sharma D, Kondekar P, Nigam K, Yadav DS (2016) Drain work function engineered doping-less charge plasma tfet for ambipolar suppression and rf performance improvement: a proposal, design, and investigation. IEEE Trans Electron Devices 63(10):3950–3957
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