An Improved Analog/RF and Linearity Performances with Small-Signal Parameter Extraction of Virtually Doped Recessed Source/Drain Dopingless Junctionless Transistor for Radio-Frequency Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00518-x.pdf
Reference30 articles.
1. Dixit A, Kottantharayil A, Collaert N, Goodwin M, Jurczak M, DeMeyer K, DeMeyer K (2005) Analysis of the parasitic S/D resistance in multiple-gate FETs. IEEE Transactions on Electron Devices 52(6):1132–1140. https://doi.org/10.1109/TED.2005.848098
2. Kranti A, Alastair Armstrong G (2007) Source/drain extension region engineering in FinFETs for low-voltage analog applications. IEEE Electron Device Letters 28(2):139–141. https://doi.org/10.1109/LED.2006.889239
3. Hisamoto D (2001) FD/DG-SOI MOSFET-a viable approach to overcoming the device scaling limit. International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224). IEEE. https://doi.org/10.1109/IEDM.2001.979528
4. Pfiester JR, Sivan RD, Liaw HM, Seelbach CA, Gunderson CD (1990) A self-aligned elevated source/drain MOSFET. IEEE electron device letters 11(9):365–367. https://doi.org/10.1109/55.62957
5. Zhang Z, Zhang S, Chan M (2004) Self-align recessed source drain ultrathin body SOI MOSFET. IEEE Electron Device Letters 25(11):740–742. https://doi.org/10.1109/LED.2004.837582
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Vertical Dopingless Dual-Gate Junctionless FET for Digital and RF Analog Applications;Silicon;2024-02-01
2. Impact of temperature variation on linearity parameters of nanotube surrounding gate (NT‐SG) MOSFETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-14
3. Ambipolarity Suppression of Band Gap and Gate Dielectric Engineered Novel Si0.2Ge0.8/GaAs JLTFET Using Gate Overlap Technique;Silicon;2023-08-18
4. Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications;Microsystem Technologies;2023-08-18
5. Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance;Silicon;2023-03-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3