Design and Performance Assessment of HfO2/SiO2 Gate Stacked Ge/Si Heterojunction TFET on SELBOX Substrate (GSHJ-STFET)
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01898-y.pdf
Reference28 articles.
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3. Veeraraghavan S, Fossum JG (1989) Short-channel effects in SOI MOSFETs. IEEE Trans Electron Devices 36:522–528. https://doi.org/10.1109/16.19963
4. Boucart K, Ionescu AM (2008) A new definition of threshold voltage in tunnel FETs. Solid State Electron 52(9):1318–1323
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